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| SI7108DN Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 22 19.7 rDS(on) (W) 0.0049 @ VGS = 10 V 0.0061 @ VGS = 4.5 V Qg (Typ) 20 D TrenchFETr Gen II Power MOSFET for Ultra Low On-Resistance D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested RoHS COMPLIANT APPLICATIONS PowerPAK 1212-8 3.30 mm S 1 2 3 S S 3.30 mm D D D D Synchronous Rectification Point-of-Load Converters Protection Devices Hot Swap D G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SI7108DN-T1--E3 (Lead (Pb)-Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c L = 0 1 mH 0.1 TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 20 "16 22 Steady State Unit V 14 11.2 60 A 1.3 22 24 A mJ 1.5 0.8 -55 to 150 260 W ID IDM IS IAS EAS 17.6 3.2 3.8 PD TJ, Tstg 2.0 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case (Drain) t v 10 sec Steady State Steady State RthJA RthJC Symbol Typical 24 65 1.9 Maximum 33 81 2.4 Unit _C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Reliability Manual for profile. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73216 S-51413--Rev. C, 01-Aug-05 www.vishay.com 1 SI7108DN Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "16 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 22 A VGS = 4.5 V, ID = 19.7 A VDS = 15 V, ID = 22 A IS = 3.2 A, VGS = 0 V 40 0.0041 0.005 88 0.75 1.2 0.0049 0.0061 1 2 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Reverse Recovery Charge Qg Qgs Qgd Rg td(on) tr td(off) tf trr Qrr IF = 3 2 A di/dt = 100 A/ms 3.2 A, VDD = 20 V, RL = 20 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W f = 1 MHz 0.7 VDS = 10 V, VGS = 4.5 V, ID = 22 A 20 6.3 4.9 1.4 10 10 60 10 30 20 2.1 15 15 130 15 60 36 nC ns W 30 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 4 V 50 3V 60 Transfer Characteristics 50 I D - Drain Current (A) 40 I D - Drain Current (A) 40 30 30 TC = 125_C 20 20 10 10 25_C -55_C 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 73216 S-51413--Rev. C, 01-Aug-05 2 SI7108DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.008 0.007 r DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.006 0.005 0.004 0.003 0.002 500 0.001 Crss 0.000 0 10 20 30 40 50 60 0 0 4 8 12 16 20 VGS = 4.5 V 3000 Ciss Capacitance 2500 2000 VGS = 10 V 1500 1000 Coss ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 22 A rDS(on) - On-Resistance (Normalized) 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 22 A 8 1.4 6 1.2 4 1.0 2 0.8 0 0 10 20 30 40 50 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 0.015 60 0.012 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) ID = 22 A 0.009 TJ = 150_C 10 0.006 TJ = 25_C 0.003 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 73216 S-51413--Rev. C, 01-Aug-05 www.vishay.com 3 SI7108DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 ID = 250 mA 40 50 Single Pulse Power, Juncion-to-Ambient 0.2 V GS(th) Variance (V) Power (W) -0.0 30 -0.2 20 -0.4 10 -0.6 -0.8 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area 100 *Limited by rDS(on) IDM Limited P(t) = 0.0001 10 I D - Drain Current (A) ID(on) Limited 1 P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse BVDSS Limited P(t) = 10 dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 73216 S-51413--Rev. C, 01-Aug-05 SI7108DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73216. Document Number: 73216 S-51413--Rev. C, 01-Aug-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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